SILICON AUGER TRANSISTOR - NEW INSIGHT INTO THE PERFORMANCE OF A TUNNEL MIS EMITTER TRANSISTOR

An experimental study of the silicon tunnel MIS emitter transistor cha racteristics shows that tunneling hot electrons produce Auger ionizati on in the collector layer. This effect is responsible For a high value and a multistep sharp rise of current gain and for multistable S-shap e collector characteristics in common emitter operation. A possible mo dification of the transistor structure is a transistor with a metal (o r superconducting) base layer. The Auger ionization probability near t hreshold in Si has been studied by using an Auger transistor structure .