Iv. Grekhov et al., SILICON AUGER TRANSISTOR - NEW INSIGHT INTO THE PERFORMANCE OF A TUNNEL MIS EMITTER TRANSISTOR, Solid-state electronics, 38(8), 1995, pp. 1533-1542
An experimental study of the silicon tunnel MIS emitter transistor cha
racteristics shows that tunneling hot electrons produce Auger ionizati
on in the collector layer. This effect is responsible For a high value
and a multistep sharp rise of current gain and for multistable S-shap
e collector characteristics in common emitter operation. A possible mo
dification of the transistor structure is a transistor with a metal (o
r superconducting) base layer. The Auger ionization probability near t
hreshold in Si has been studied by using an Auger transistor structure
.