PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION

Authors
ZHAO TX JI H LIANG Q WANG XP XU PS LU ED WU JX HSU CC
Citation
Tx. Zhao et al., PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1967-1969
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
4
Year of publication
1995
Pages
1967 - 1969
Database
ISI
SICI code
0734-2101(1995)13:4<1967:POKNAO>2.0.ZU;2-Y
Abstract
The effect of a potassium overlayer on nitridation and oxidation of th e InP(100) surface is investigated by core-level and valence-band phot oemission spectroscopy using synchrotron radiation. In comparison with the K-promoted nitridation of the InP(110) surface obtained by cleava ge in situ, we found that the promotive effect for the InP(100) surfac e cleaned by ions bombardment is much stronger and that the nitridatio n products consist of two kinds of complexes: InPNx and InPNx+y. The r esults confirmed that surface defects play an important part in the pr omotive effect. Furthermore, in contrast with K-promoted oxidation of InP(100) where bonding is observed between indium and oxygen, indium a toms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100). (C) 1995 American Vacuum Society.