Tx. Zhao et al., PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION AND OXIDATION OF THE INP(100) SURFACE USING SYNCHROTRON-RADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1967-1969
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The effect of a potassium overlayer on nitridation and oxidation of th
e InP(100) surface is investigated by core-level and valence-band phot
oemission spectroscopy using synchrotron radiation. In comparison with
the K-promoted nitridation of the InP(110) surface obtained by cleava
ge in situ, we found that the promotive effect for the InP(100) surfac
e cleaned by ions bombardment is much stronger and that the nitridatio
n products consist of two kinds of complexes: InPNx and InPNx+y. The r
esults confirmed that surface defects play an important part in the pr
omotive effect. Furthermore, in contrast with K-promoted oxidation of
InP(100) where bonding is observed between indium and oxygen, indium a
toms did not react directly with nitrogen atoms during the K-promoted
nitridation of InP(100). (C) 1995 American Vacuum Society.