HIGH-QUALITY HGCDTE EPILAYERS GROWN ON (211)B GAAS BY MOLECULAR-BEAM EPITAXY

Authors
CHEN SD LIN L HE XZ YING MJ WU RQ
Citation
Sd. Chen et al., HIGH-QUALITY HGCDTE EPILAYERS GROWN ON (211)B GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 152(4), 1995, pp. 261-265
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
152
Issue
4
Year of publication
1995
Pages
261 - 265
Database
ISI
SICI code
0022-0248(1995)152:4<261:HHEGO(>2.0.ZU;2-9
Abstract
HgCdTe (MCT) epilayers grown on (211)B GaAs by molecular beam epitaxy (MBE) have been reported. The growth procedure and characteristics of MCT epilayers are described. Important processing factors required to achieve high quality MCT are discussed. A photodiode array is fabricat ed for assessment of MCT epilayer quality. The results confirm the dev ice quality of the MCT epilayers.