HgCdTe (MCT) epilayers grown on (211)B GaAs by molecular beam epitaxy
(MBE) have been reported. The growth procedure and characteristics of
MCT epilayers are described. Important processing factors required to
achieve high quality MCT are discussed. A photodiode array is fabricat
ed for assessment of MCT epilayer quality. The results confirm the dev
ice quality of the MCT epilayers.