MELT QUENCHING TECHNIQUE FOR DIRECT OBSERVATION OF OXYGEN-TRANSPORT IN THE CZOCHRALSKI-GROWN SI PROCESS

Oxygen distribution in the Czochralski-grown (Cz) silicon single cryst al is closely associated with melt convection occurring near the growt h interface because oxygen atoms in the melt are transported by fluid motion. Using melt quenching developed utilizing the double-layered (D L) Cz process, we studied oxygen transport phenomena around the growth interface. Micro-Fourier transform infrared spectroscopy (micro-FTIR) measurements showed that the oxygen concentration distribution in the growing crystal was related to melt convections, such as the Cochran flow and fluid motion from the melt surface. This also agrees with cha racteristic oxygen striation in both the crystal and melt observed usi ng micro-FTIR and Wright etching. We concluded that melt quenching usi ng the DLCz process is effective in directly observing the oxygen conc entration distribution in the melt during crystal growth.