STRUCTURAL CHARACTERISTICS OF DILUTED MAGNETIC SEMICONDUCTOR ZN1-XMNXSE FILMS GROWN BY HOT-WALL EPITAXY ON GAAS(100) SUBSTRATES

In this paper, we report the growth of Zn1-xMnxSe films on GaAs(100) s ubstrates by hot wall epitaxy up to an Mn concentration of x = 0.52. T he crystalline structures of the Zn1-xMnxSe layers were characterized by X-ray diffraction and Raman scattering. At a low growth rate of 1 m u m/h, Zn1-xMnxSe films have demonstrated pure zinc-blende structure u p to a composition of x = 0.50. At a high growth rate of above 2 mu m/ h, the films exhibited mixed phases of zinc-blende and hexagonal struc tures over the range 0.19 less than or equal to x less than or equal t o 0.52. The achievement of (111) oriented single crystal Zn1-xMnxSe ep ilayers on GaAs(100) substrates and its explanation are presented.