STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES

Structural variations and defects in both transformed and epitaxial 4H -SiC layers deposited on 6H-SiC and 15R-SiC Lely wafers have been inve stigated by X-ray differential diffractometry and Lang X-ray topograph y methods. It has been shown that the layers consist of several sublay ers. These sublayers are differentiated by the amount to which they re lax the interface elastic strains. In this paper these differences are shown and the character of dislocation ensembles is discussed in the context of lattice mismatch and growth conditions.