GROWTH OF ALPHA-HEXATHIENYL BY A MICRO MELT TECHNIQUE

Citation
Ra. Laudise et al., GROWTH OF ALPHA-HEXATHIENYL BY A MICRO MELT TECHNIQUE, Journal of crystal growth, 152(3), 1995, pp. 241-244
Citations number
8
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
152
Issue
3
Year of publication
1995
Pages
241 - 244
Database
ISI
SICI code
0022-0248(1995)152:3<241:GOABAM>2.0.ZU;2-Y
Abstract
alpha-Hexathienyl is a most promising thin film transistor material. F or the first time crystals large enough (500 mu m) for single crystal X-ray determinations have been prepared. A 30 mg melt was contained in a small capillary which was cooled in a hot stage microscope modified so as to produce a temperature gradient of 1 degrees C/mm along the t ube. The sample was cooled from above the melting point (309 degrees C ) to 280 degrees C at a rate of 0.1 degrees C/min. Best crystals were obtained when the melt depth was small.