DEGRADATIONS IN PZT THIN-FILM CAPACITORS

Authors
Citation
Ik. Yoo, DEGRADATIONS IN PZT THIN-FILM CAPACITORS, Integrated ferroelectrics, 9(1-3), 1995, pp. 117-123
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
9
Issue
1-3
Year of publication
1995
Pages
117 - 123
Database
ISI
SICI code
1058-4587(1995)9:1-3<117:DIPTC>2.0.ZU;2-2
Abstract
Degradations in ferroelectric capacitors are categorized as DC and AC types. In memory applications, AC type degradations appears to be more serious than those of DC type. Breakdown, for example, occurs earlier under AC operation than DC. AC type degradations were reviewed and in duction period was also discussed extensively. An induction mechanism was proposed based on domain rearrangement under AC conditions. Curve fitting was demonstrated according to induction equation. It is sugges ted that the fatigue equation should be modified when induction period is considered.