INFLUENCE OF THE LIQUID-PHASE EPITAXIAL-GROWTH CONDITIONS ON COMPOSITION PROFILE FOR HG1-XCDXTE FILM

Authors
LI B CHU JH CHEN XQ CAO JY TANG DY
Citation
B. Li et al., INFLUENCE OF THE LIQUID-PHASE EPITAXIAL-GROWTH CONDITIONS ON COMPOSITION PROFILE FOR HG1-XCDXTE FILM, Journal of electronic materials, 24(8), 1995, pp. 975-981
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
8
Year of publication
1995
Pages
975 - 981
Database
ISI
SICI code
0361-5235(1995)24:8<975:IOTLEC>2.0.ZU;2-C
Abstract
In this paper, the expressions for the effective segregation coefficie nt and composition depth profile of Hg1-xCdxTe Liquid phase epitaxial (LPE) film are presented and compared with the experimental data. The expressions are derived based on the associated solution model and the phase diagram theory of Hg1-xCdxTe. The results show that supercoolin g, cooling rate, liquid composition, and nonequilibrium Hg pressure ov er the solution will result in the changes of average composition and composition-depth profile of the grown film. adequate Hg loss, slow co oling rate, and proper prescription of liquid composition can improve the uniformity of longitudinal composition of Hg1-xCdxTe LPE film.