DEFECTS IN CDTE SINGLE-CRYSTALS GROWN BY VERY FAST VAPOR GROWTH TECHNIQUE

Single crystals of CdTe were obtained by the very fast vapor growth te chnique. The four major defects, namely, multi-grains, lamellar, later al, and micro-twins, which are fatal to the single crystallinity, were eliminated or Limited by increasing the growth stability. This invest igation indicates that the latent heat under high growth rate conditio ns should not be neglected. A model is developed to explain the effect s of latent heat on the growth stability at the interface. A relations hip between crystal morphologies and growth conditions was established . It strongly suggests that the above defects are growth stability rel ated, The origin of twinning, dominated by growth stability, is discus sed in this paper.