Pk. Chu et al., ATOMIC-FORCE MICROSCOPY (AFM) STATISTICAL PROCESS-CONTROL FOR MICROELECTRONICS APPLICATIONS, Materials chemistry and physics, 41(1), 1995, pp. 61-65
The microroughness of silicon surfaces has been shown to affect photol
ithographic processes, gate oxides, and wafer bonding. Atomic force mi
croscopy (AFM) is an indispensable tool for monitoring surface microro
ughness. However, the long-term reliability of this measurement techni
que must be established before it can be routinely applied in the micr
oelectronics industry. We investigated several important characteristi
cs that must be well controlled for consistent microroughness measurem
ents: tip quality, piezo tube calibration, and choice of the proper st
atistical process control (SPC) sample.