ATOMIC-FORCE MICROSCOPY (AFM) STATISTICAL PROCESS-CONTROL FOR MICROELECTRONICS APPLICATIONS

Citation
Pk. Chu et al., ATOMIC-FORCE MICROSCOPY (AFM) STATISTICAL PROCESS-CONTROL FOR MICROELECTRONICS APPLICATIONS, Materials chemistry and physics, 41(1), 1995, pp. 61-65
Citations number
3
Categorie Soggetti
Material Science
ISSN journal
02540584
Volume
41
Issue
1
Year of publication
1995
Pages
61 - 65
Database
ISI
SICI code
0254-0584(1995)41:1<61:AM(SPF>2.0.ZU;2-1
Abstract
The microroughness of silicon surfaces has been shown to affect photol ithographic processes, gate oxides, and wafer bonding. Atomic force mi croscopy (AFM) is an indispensable tool for monitoring surface microro ughness. However, the long-term reliability of this measurement techni que must be established before it can be routinely applied in the micr oelectronics industry. We investigated several important characteristi cs that must be well controlled for consistent microroughness measurem ents: tip quality, piezo tube calibration, and choice of the proper st atistical process control (SPC) sample.