PREPARATION AND PROPERTIES OF SPUTTERED LEAD TITANATE THIN-FILMS ON MGO SINGLE-CRYSTALS AND MGO BUFFER LAYERS

By means of planar multitarget sputtering (001) oriented PbTiO3 films were deposited onto highly preferred (100) oriented platinum electrode s on (100) MgO single crystal substrates. Single phase perovskite type films with a degree of (001) orientation between 60% and 70% have bee n sputtered at substrate temperatures as low as about 470 degrees C. T he as grown films exhibit a dielectric constant in the range of 120 to 140 and a pyroelectric coefficient of about 20 nCcm(-2)K(-1) at room temperature. The dielectric loss is about 0.01 at frequencies from 1 t o 10 kHz. (100) GaAs substrates with an evaporated, highly oriented (1 00) MgO buffer layer were also used as substrates. However, on these s ubstrates the platinum bottom electrode did not grow highly oriented t hough the same deposition parameters for Pt deposition as in the case of the single crystalline MgO substrate were used. That's why PbTiO3 w as produced with a lower (001) preferred orientation. Therefore, the d ielectric constant is higher (170-190) and the pyroelectric coefficien t is lower (12 nCcm(-2)K(-1)).