EFFECT OF INTERFACE ENERGY ON EROSION OF A(III)B(V) SUBSTRATES DURINGLIQUID-PHASE HETEROEPITAXY

Citation
Jm. Olchowik et al., EFFECT OF INTERFACE ENERGY ON EROSION OF A(III)B(V) SUBSTRATES DURINGLIQUID-PHASE HETEROEPITAXY, Journal of crystal growth, 153(1-2), 1995, pp. 11-18
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
153
Issue
1-2
Year of publication
1995
Pages
11 - 18
Database
ISI
SICI code
0022-0248(1995)153:1-2<11:EOIEOE>2.0.ZU;2-Y
Abstract
Erosive damage to the solid phase surface is the frequently observed e ffect of the exposure of the multicomponent liquid solution of A(III)B (V) compounds to A(III)B(V) binary substrates. This erosion particular ly affects heterocompositions with a high lattice parameter mismatch. The mechanisms leading to such a phenomenon were analyzed for the case of the Ga-In-P-As/InP and Ga-In-P-As/GaAs heteropairs. Based on the m odel of interatomic interactions at the interface, it was found that t he erosion instability of the interface depends mainly on the excessiv e energy of the lattice in this region.