SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY (VOL 145, PG 447, 1994)

Authors
RITCHIE DM DIPAOLA A TROMBY M DELLAGIOVANNI M DIEGIDIO M VIDIMARI F
Citation
Dm. Ritchie et al., SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY (VOL 145, PG 447, 1994), Journal of crystal growth, 153(1-2), 1995, pp. 68-68
Citations number
1
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
153
Issue
1-2
Year of publication
1995
Pages
68 - 68
Database
ISI
SICI code
0022-0248(1995)153:1-2<68:SDABLM>2.0.ZU;2-R