NARROW CHANNEL 2-D MESFET FOR LOW-POWER ELECTRONICS

A 2-D MESFET utilizing sidewall Schottky contacts on either side of a very narrow 2-d electron gas channel is described. Record transconduct ance of 295 and 130 mS/mm have been achieved at room temperature in 1. 0 and 0.5 micron wide devices, respectively. We also present accurate 2-D MESFET current-voltage and capacitance-voltage models. These model s have been implemented into AIM-Spice which was used to simulate DCFL inverter and ring oscillator circuits. The ring oscillator Simulation s predict a power-delay product of less than 0.1 fJ/gate at room tempe rature, suggesting that the 2-D MESFET may be useful for ultra low pow er electronics applications.