MICROWAVE TRIODE AMPLIFIERS FROM 1 TO 2 GHZ USING MOLYBDENUM THIN-FILM-FIELD-EMISSION CATHODE DEVICES

Authors
PHILLIPS PM NEIDERT RE MALSAWMA L HOR C
Citation
Pm. Phillips et al., MICROWAVE TRIODE AMPLIFIERS FROM 1 TO 2 GHZ USING MOLYBDENUM THIN-FILM-FIELD-EMISSION CATHODE DEVICES, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1674-1680
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
9
Year of publication
1995
Pages
1674 - 1680
Database
ISI
SICI code
0018-9383(1995)42:9<1674:MTAF1T>2.0.ZU;2-K
Abstract
Experimental results are presented on microwave amplifiers using Molyb denum Thin-Film-Field-Emission cathode devices, fabricated at Stanford Research Institute (SRI). A device having 250 tips, operating at 4.8 mA of current with g(m) = 840 mu S is inferred to have an intrinsic po wer gain of 7 dB at 1.1 GHz. Other results are given for frequencies u p to 1.7 GHz. For die first time, device and circuit modeling of suffi cient accuracy has been performed that Tt is possible to confidently d educe the intrinsic performance parameters of the FE devices. The impo rtance of integrated matching circuits for optimum power gain performa nce is exposed and quantified.