THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS - COMMENTS

Authors
INIGUEZ B
Citation
B. Iniguez, THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS - COMMENTS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1712-1712
Citations number
1
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
9
Year of publication
1995
Pages
1712 - 1712
Database
ISI
SICI code
0018-9383(1995)42:9<1712:TVMFDM>2.0.ZU;2-N
Abstract
From the analytical solution of Poisson's equation in the depletion la yer of a MOSFET in weak inversion we find an exact expression of the t hreshold voltage, valid for all drain biases and channel lengths (if t hey are greater than the minimum acceptable value) using the same proc edure as in a recent paper from Liu et al. [1].