CRITICAL AREA ANALYSIS FOR DESIGN-BASED YIELD IMPROVEMENT OF VLSI CIRCUITS

Authors
SCHMITTLANDSIEDEL D KEITELSCHULZ D KHARE J GRIEP S MALY W
Citation
D. Schmittlandsiedel et al., CRITICAL AREA ANALYSIS FOR DESIGN-BASED YIELD IMPROVEMENT OF VLSI CIRCUITS, Quality and reliability engineering international, 11(4), 1995, pp. 227-232
Citations number
6
Categorie Soggetti
Engineering
Journal title
Quality and reliability engineering international → ACNP
ISSN journal
07488017
Volume
11
Issue
4
Year of publication
1995
Pages
227 - 232
Database
ISI
SICI code
0748-8017(1995)11:4<227:CAAFDY>2.0.ZU;2-S
Abstract
Yield improvements can be achieved by both contamination control (manu facturing) and defect sensitivity decrease (design). In this paper, th e need for critical area analysis is demonstrated for design based yie ld prediction and improvement. Experimental results for a typical CMOS process are provided.