VOLTAGE CONTRAST STUDIES ON 0-CENTER-DOT-5 MU-M INTEGRATED-CIRCUITS BY SCANNING FORCE MICROSCOPY

Authors
BOHM C SPRENGEPIEL J KUBALEK E
Citation
C. Bohm et al., VOLTAGE CONTRAST STUDIES ON 0-CENTER-DOT-5 MU-M INTEGRATED-CIRCUITS BY SCANNING FORCE MICROSCOPY, Quality and reliability engineering international, 11(4), 1995, pp. 253-256
Citations number
8
Categorie Soggetti
Engineering
Journal title
Quality and reliability engineering international → ACNP
ISSN journal
07488017
Volume
11
Issue
4
Year of publication
1995
Pages
253 - 256
Database
ISI
SICI code
0748-8017(1995)11:4<253:VCSO0M>2.0.ZU;2-2
Abstract
A scanning force microscope (SFM) test system is used for voltage cont rast studies on 0 . 5 mu m integrated circuits. Waveform measurements are performed on passivated 0 . 5 mu m conducting lines up to 4 GHz. A dditionally two-dimensional measurements at 10 MHz demonstrate the pot ential for device internal function and failure analysis in the sub-mu m regime by direct correlation between voltage contrast and quantitat ive topography images.