A MODEL FOR LIQUID-PHASE ELECTROEPITAXY UNDER AN EXTERNAL MAGNETIC-FIELD .2. APPLICATION

Citation
Z. Qin et al., A MODEL FOR LIQUID-PHASE ELECTROEPITAXY UNDER AN EXTERNAL MAGNETIC-FIELD .2. APPLICATION, Journal of crystal growth, 153(3-4), 1995, pp. 131-139
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
153
Issue
3-4
Year of publication
1995
Pages
131 - 139
Database
ISI
SICI code
0022-0248(1995)153:3-4<131:AMFLEU>2.0.ZU;2-M
Abstract
Numerical simulations for the liquid phase electroepitaxy (LPEE) growt h process of gallium arsenide, in a cylindrical system, under an appli ed magnetic field were carried out using the finite element method bas ed on the penalty function formulation. It was found that this formula tion is more robust and more efficient than a mixed velocity-pressure formulation. The simulation results have shown that the effect of natu ral convection can be reduced significantly by the application of an e xternal magnetic field. The uniformity of grown layers improves with i ncreasing magnitude of the applied magnetic field. However, the comple te elimination of natural convection in the liquid phase requires the application of a very large magnetic held. For such a case the adverse effects of the applied field on the process must be examined carefull y.