Mobile and personal communication systems are expected to represent a
huge market for microwave components in the coming years. A number of
components in silicon bipolar, silicon Bi-CMOS, GaAs MESFET, HBT and H
EMT are now becoming available for system application. There are trade
offs among the competing technologies with regard to performance, cost
, reliability and time-to-market. This paper describes process selecti
on and requirements of cost and r.f, performances to microwave semicon
ductor components for digital cellular and cordless telephones. Furthe
rmore, new circuit techniques which were developed by NTT are presente
d.