JUNCTION HETEROSTRUCTURES FOR HIGH-PERFORMANCE ELECTRONICS

The exploding market in mm-wave wireless communications market require s a simple transistor technology which: (i) exhibits high performance across a wide bias range to perform both transmit and receive operatio ns; (ii) has high threshold uniformity to enable high density, high sp eed signal processing circuits; and (iii) has basic technological requ irements which is relatively transparent to both commercially importan t materials, InP and GaAs. The heterojunction transistor technology pr esented here satisfies these requirements.