The exploding market in mm-wave wireless communications market require
s a simple transistor technology which: (i) exhibits high performance
across a wide bias range to perform both transmit and receive operatio
ns; (ii) has high threshold uniformity to enable high density, high sp
eed signal processing circuits; and (iii) has basic technological requ
irements which is relatively transparent to both commercially importan
t materials, InP and GaAs. The heterojunction transistor technology pr
esented here satisfies these requirements.