MODERN EPITAXIAL TECHNIQUES FOR HBT STRUCTURES

Citation
F. Alexandre et al., MODERN EPITAXIAL TECHNIQUES FOR HBT STRUCTURES, Solid-state electronics, 38(9), 1995, pp. 1667-1674
Citations number
50
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
9
Year of publication
1995
Pages
1667 - 1674
Database
ISI
SICI code
0038-1101(1995)38:9<1667:METFHS>2.0.ZU;2-1
Abstract
This paper reviews the different specifications required for a high yi eld and low cost epitaxial process of heterojunction bipolar transisto r (HBT) structures on GaAs and InP substrate. For these two semiconduc tor systems, it is shown that arsenide/phosphide heterostructures and carbon doping of the npn HBT base layer lead to both high device relia bility and simple and reproducible HBT fabrication process. Other requ irements concerning high growth rate, low and constant growth temperat ure, high growth uniformity on several wafers as well as low surface d efect density are also identified. It is shown that chemical beam epit axy (CBE) and metal-organic vapor phase epitaxy (MOVPE) techniques fit all these requirements while molecular beam epitaxy (MBE) must be imp roved on specific points.