MATERIAL AND DEVICE PROPERTIES OF MOCVD GROWN INALAS INGAAS HEMTS/

A systematic study of MOCVD grown InP based heterostructures and their application in HEMT technology is reported. The heterostructures are realized by Metal-Organic-Chemical-Vapor-Deposition (MOCVD) which is a well suited for production growth technique. The impact of growth tem perature and AsH, flow rates on the material properties was investigat ed and optimized. To improve the device performance even further, Fe-d oped InAlAs is also studied. By optimizing the growth conditions of In AlAs/InGaAs heterostructure, we demonstrates high performance I pm gat e length InAlAs/InGaAs HEMTs which show f(t) of 60 GHz and f(max) of 1 20 GHz. By applying the same submicron technology on MOCVD HEMT layers grown by a commercial vendor as on Molecular-Beam- Epitaxy grown laye rs, we could demonstrate equivalent f(t) (180 GHz) and f(max) (220 GHz ) performance.