CIRCUIT DEMONSTRATIONS IN A GAAS BIFET TECHNOLOGY

Authors
ZAMPARDI PJ BECCUE SM YU J PEDROTTI K PIERSON RL HO WJ CHANG MF WANG KC
Citation
Pj. Zampardi et al., CIRCUIT DEMONSTRATIONS IN A GAAS BIFET TECHNOLOGY, Solid-state electronics, 38(9), 1995, pp. 1723-1726
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
9
Year of publication
1995
Pages
1723 - 1726
Database
ISI
SICI code
0038-1101(1995)38:9<1723:CDIAGB>2.0.ZU;2-X
Abstract
In this paper, we present several circuits demonstrating the versatili ty of our GaAs BIFET technology. Among the circuits presented here are a 360 ps access time SRAM, a 2 GHz 2-bit single-chip DRFM, a reduced power laser driver at 1.5 GHz, and an OEIC suitable for 4Gb/s systems. This technology will have a significant impact on many areas of circu it research such as delta-sigma analog to digital convertors and mixed -mode applications.