NOVEL HETERODIMENSIONAL DIODES AND TRANSISTORS

We describe novel heterodimensional devices which utilize Schottky bar riers to a two-dimensional (2D) electron gas. These devices include a 2D-3D Schottky diode, an AlaAs/GaAs Schottky Gated Resonant Tunneling Transistor (SGRTT), an AlGaAs/InGaAs 2D Metal Semiconductor Field Effe ct Transistor (2D MESFET), and a Coaxial MESFET. These devices hold pr omise of ultra low power, high speed operation. The 1 micron wide 2D M ESFET, which has a very low output conductance and a steep subthreshol d slope, exhibited the highest transconductance of any 1 mu m wide dev ice.