BERYLLIUM ION-IMPLANTATION INTO GAAS AND PSEUDOMORPHIC ALGAAS INGAAS/GAAS HETEROSTRUCTURE/

Implantations of Be, Be + P, Be + F, Be + P + F, BeF and Mg + P into G aAs and AlGaAs/InGaAs/GaAs pseudomorphic heterostructure were evaluate d by secondary ion mass spectrometry profilings and electrical resisti vity measurements. Rapid thermal annealing causes a strong diffusion o f Be when implanted alone. Co-implantation with P prevents both diffus ion and degradation of the Gaussian-shape implant distribution and thu s improves the semiconductor sheet resistivity. Annealing at 850 degre es C for 10 s for a Be + P co-implant results in a 60% activation effi ciency, and lower diffusion and resistivity when compared to single Be , Be + F, Be + F + P, BeF, and Mg + P implanted at the same dose.