Xs. Miao et al., OPTICAL-PROPERTIES AND REACTIVE SPUTTERING CONDITIONS OF ALN AND ALSIN THIN-FILMS FOR MAGNETOOPTICAL APPLICATIONS, Journal of electronic materials, 26(1), 1997, pp. 21-24
The dependence of the refractive index and film thickness of AlN and A
lSiN thin films on the reactive sputtering conditions (N-2 partial pre
ssure, total pressure, and rf sputtering power) have been studied in d
etail and analyzed in terms of the mechanism of reactive sputtering an
d the target poisoning phenomenon. On the basis of the results, the sp
uttering conditions of AlN and AlSiN films have been optimized for mag
neto-optical applications. The AlN and AlSiN films after optimization
of the sputtering conditions had very high transmissivity and refracti
ve index, and were suitable for magneto-optical Kerr effect enhancemen
t. A marked enhancement of the magneto-optical Kerr effect for a TbFeC
o film coated with AlN and AlSiN films was observed. The improvement o
f the signal-to-noise ratio obtained with the AlSiN film was greater t
han the AlN film.