OPTICAL-PROPERTIES AND REACTIVE SPUTTERING CONDITIONS OF ALN AND ALSIN THIN-FILMS FOR MAGNETOOPTICAL APPLICATIONS

Citation
Xs. Miao et al., OPTICAL-PROPERTIES AND REACTIVE SPUTTERING CONDITIONS OF ALN AND ALSIN THIN-FILMS FOR MAGNETOOPTICAL APPLICATIONS, Journal of electronic materials, 26(1), 1997, pp. 21-24
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
26
Issue
1
Year of publication
1997
Pages
21 - 24
Database
ISI
SICI code
0361-5235(1997)26:1<21:OARSCO>2.0.ZU;2-K
Abstract
The dependence of the refractive index and film thickness of AlN and A lSiN thin films on the reactive sputtering conditions (N-2 partial pre ssure, total pressure, and rf sputtering power) have been studied in d etail and analyzed in terms of the mechanism of reactive sputtering an d the target poisoning phenomenon. On the basis of the results, the sp uttering conditions of AlN and AlSiN films have been optimized for mag neto-optical applications. The AlN and AlSiN films after optimization of the sputtering conditions had very high transmissivity and refracti ve index, and were suitable for magneto-optical Kerr effect enhancemen t. A marked enhancement of the magneto-optical Kerr effect for a TbFeC o film coated with AlN and AlSiN films was observed. The improvement o f the signal-to-noise ratio obtained with the AlSiN film was greater t han the AlN film.