CRYSTAL-GROWTH OF ORGANIC CHARGE-TRANSFER COMPLEXES BY ELECTROCRYSTALLIZATION WITH CONTROLLED APPLIED CURRENT

It has been proposed in the past that in electrocrystallization of cha rge-transfer complexes the current applied through the electrodes must be controlled and kept proportional to the surface area of the growin g crystal in order to keep the growth rate of the surface layers const ant to obtain good quality crystals with no secondary nucleation of ne w crystals or defects. According to the concept, we could obtain so la rge and good quality crystals that the surfaces of crystals of kappa-( BEDT-TTF)(2)Cu(SCN)(2), (TMTTF)(2)Br and (TMTSF)(2)X (X = ClO4, PF6 an d AsF6) obtained by electrocrystallization with controlled applied cur rent were flatter than the ones obtained by a constant applied current .