G. Schmidt et al., SELECTIVE GROWTH OF SIGE STRUCTURES IN THE SUB 100 NM RANGE USING LOW-PRESSURE VAPOR-PHASE EPITAXY, Journal of crystal growth, 154(1-2), 1995, pp. 189-192
In recent times many efforts have been made to produce SiGe-nanostruct
ures in order to achieve new optical properties. Most of them use dire
ct etching of the SiGe layer thus inducing defects at the sidewalls. S
elective growth allows the production of nanostructures that do not ex
perience any etching process. The SiGe structure is totally covered by
silicon. Using a new two layer resist system structures with dimensio
ns down to 70 nm were grown.