SELECTIVE GROWTH OF SIGE STRUCTURES IN THE SUB 100 NM RANGE USING LOW-PRESSURE VAPOR-PHASE EPITAXY

In recent times many efforts have been made to produce SiGe-nanostruct ures in order to achieve new optical properties. Most of them use dire ct etching of the SiGe layer thus inducing defects at the sidewalls. S elective growth allows the production of nanostructures that do not ex perience any etching process. The SiGe structure is totally covered by silicon. Using a new two layer resist system structures with dimensio ns down to 70 nm were grown.