INTERFACE STATES CAPACITANCE IN AUPTTI NGAAS SCHOTTKY CONTACTS - A MODIFIED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD/

Citation
M. Zamora et al., INTERFACE STATES CAPACITANCE IN AUPTTI NGAAS SCHOTTKY CONTACTS - A MODIFIED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD/, Solid-state electronics, 38(10), 1995, pp. 1771-1774
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
38
Issue
10
Year of publication
1995
Pages
1771 - 1774
Database
ISI
SICI code
0038-1101(1995)38:10<1771:ISCIAN>2.0.ZU;2-F
Abstract
In this paper, limitations of the Schottky Capacitance Spectroscopy (S CS) method are discussed and modifications of the method for low forwa rd bias and high frequency are proposed. It is shown that simplificati ons commonly accepted in the SCS method can lead to erroneous conclusi ons as to the cut-off frequency and hence the interface states paramet ers. A modified SCS method is used in the interface states capacitance measurements in AuPtTi/nGaAs Schottky diodes.