A NEW GATE CURRENT MEASUREMENT TECHNIQUE FOR THE CHARACTERIZATION OF HOT-CARRIER-INDUCED DEGRADATION IN MOSFETS

Authors
LEANG SE CHIM WK CHAN DSH
Citation
Se. Leang et al., A NEW GATE CURRENT MEASUREMENT TECHNIQUE FOR THE CHARACTERIZATION OF HOT-CARRIER-INDUCED DEGRADATION IN MOSFETS, Solid-state electronics, 38(10), 1995, pp. 1791-1798
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
10
Year of publication
1995
Pages
1791 - 1798
Database
ISI
SICI code
0038-1101(1995)38:10<1791:ANGCMT>2.0.ZU;2-G
Abstract
A new gate current measurement method is proposed for the characteriza tion of hot-carrier induced degradation in MOSFETs. This method requir es a much shorter measurement time to obtain the I-g-V-g curve of the MOSFETs as compared to the conventional floating-gate technique, and t herefore has a lower risk of degrading the test device during the meas urement process. This paper also discusses the appropriateness of usin g a high-frequency (100 kHz-1 MHz) measurement to obtain the gate capa citance of MOSFETs when applying the floating-gate technique to obtain the device gate current.