CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE

Authors
XIAO ZX WEI TL
Citation
Zx. Xiao et Tl. Wei, CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE, Solid-state electronics, 38(10), 1995, pp. 1837-1838
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
10
Year of publication
1995
Pages
1837 - 1838
Database
ISI
SICI code
0038-1101(1995)38:10<1837:COTICC>2.0.ZU;2-F