NEW BURIED P-GRID POLYSILICON EMITTER BIPOLAR POWER TRANSISTOR()

Authors
ROULSTON DJ
Citation
Dj. Roulston, NEW BURIED P-GRID POLYSILICON EMITTER BIPOLAR POWER TRANSISTOR(), Solid-state electronics, 38(10), 1995, pp. 1854-1856
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
10
Year of publication
1995
Pages
1854 - 1856
Database
ISI
SICI code
0038-1101(1995)38:10<1854:NBPPEB>2.0.ZU;2-O