MANIFOLD ARSENIC AND PHOSPHORUS EFFUSION SOURCE FOR GAASP ALLOYS

Authors
WOOD CEC JOHNSON FG TABATABAEI SA
Citation
Cec. Wood et al., MANIFOLD ARSENIC AND PHOSPHORUS EFFUSION SOURCE FOR GAASP ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2325-2327
Citations number
13
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
5
Year of publication
1995
Pages
2325 - 2327
Database
ISI
SICI code
0734-2101(1995)13:5<2325:MAAPES>2.0.ZU;2-7
Abstract
We describe an independently valved solid arsenic and phosphorus effus ion source for molecular beam epitaxy. A common posteffusion hot zone and orifice ensure constant flux ratios of arsenic, phosphorus, and mi xed species in the beam. With this source, we have demonstrated molecu lar beam epitaxial growth of GaAs1-xPx layers with better than +/-0.4% compositional variation over a 3-in. -diam substrate. (C) 1995 Americ an Vacuum Society.