Kh. Chew et al., SILICON-OXIDE DEPOSITION IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA WITH MICROWAVE SPECTROSCOPIC MONITORING OF SIO, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2483-2489
Citations number
25
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
A 2.45 GHz electron cyclotron resonance reactor was used to deposit si
licon oxide films using both tetraethoxysilane (TEOS)/O-2 and silane/O
-2. The reactor is equipped with an in situ microwave spectrometer in
the frequency range 75-110 GHz,that is used to monitor the gas phase c
hemical species in this environment. The J = 1 --> 2 rotational transi
tion of the vibrational ground state of silicon monoxide (SiO) was det
ected and monitored in plasmas of both gas mixtures. The integrated in
tensity of the microwave transition was used to obtain absolute densit
ies of SiO integrated along the path length for both of these plasma c
hemistries. Silicon oxide films were deposited at pressures of a few m
Torr and at low wafer temperature. The properties of the deposited fil
ms were characterized using infrared absorption and wet etch rate. The
refractive indices of the films were measured by using multicolor ell
ipsometry. Deposition rates were determined as a function of oxygen/TE
OS or oxygen/silane flow ratio. An inverse correlation was found for b
oth sources between SiO abundance and deposition rate. An inverse corr
elation between SiO abundance and film quality was observed for the si
lane source. (C) 1995 American Vacuum Society.