2-DIMENSIONAL MOLECULAR-BEAM EPITAXY OF (001) CDTE ON CD AND ZN TERMINATED (001) GAAS

Authors
DHAR NK WOOD CEC BOYD PR POLLEHN HK MARTINKA M BENSON JD DINAN JH
Citation
Nk. Dhar et al., 2-DIMENSIONAL MOLECULAR-BEAM EPITAXY OF (001) CDTE ON CD AND ZN TERMINATED (001) GAAS, Journal of electronic materials, 24(9), 1995, pp. 1041-1046
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
9
Year of publication
1995
Pages
1041 - 1046
Database
ISI
SICI code
0361-5235(1995)24:9<1041:2MEO(C>2.0.ZU;2-I
Abstract
Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} s urfaces can be recrystallized above similar to 200 degrees C. Subseque nt molecular beam epitaxy of CdTe proceeds in a two-dimensional mode a nd leads to layers which are specular and single domain {001}. Threadi ng dislocation density in these layers was 1-2 x 10(5) cm(-2). Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s.