THERMOMIGRATION OF TELLURIUM PRECIPITATES IN CDZNTE CRYSTALS GROWN BYVERTICAL BRIDGMAN METHOD

Citation
Ts. Lee et al., THERMOMIGRATION OF TELLURIUM PRECIPITATES IN CDZNTE CRYSTALS GROWN BYVERTICAL BRIDGMAN METHOD, Journal of electronic materials, 24(9), 1995, pp. 1053-1056
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
24
Issue
9
Year of publication
1995
Pages
1053 - 1056
Database
ISI
SICI code
0361-5235(1995)24:9<1053:TOTPIC>2.0.ZU;2-H
Abstract
Te precipitates in CdZnTe have been characterized by x-ray diffraction at room and higher temperatures. From the x-ray results at room tempe rature, it has been confirmed that Te precipitates in CdZnTe have the same structural phase as observed in elemental Te under high pressure. The x-ray results at higher temperature indicate that Te precipitates melt around 440 degrees C. CdZnTe samples containing Te precipitates have been annealed at temperatures below and above 440 degrees C with thermal gradient of similar to 70 degrees C/cm. Results of the observa tion with infrared microscope before and after the annealings indicate distinct occurrence of thermomigration of Te precipitates in samples annealed at temperature above 440 degrees C compared with ones anneale d at temperature below 440 degrees C. Thermomigration velocity obtaine d from these results is similar to 50 mu m/h. The average value for th e effective diffusion coefficient of the metallic atoms in Te precipit ates calculated by using the thermomigration velocity is similar to 3 x 10(-5) cm(2)/s.