S. Krishnamurthy et al., TEMPERATURE-DEPENDENCE OF BAND-GAPS IN HGCDTE AND OTHER SEMICONDUCTORS, Journal of electronic materials, 24(9), 1995, pp. 1121-1125
Band-edge shifts induced by the electron-phonon interaction are calcul
ated for HgCdTe alloys and various semiconductor compounds starting fr
om accurate zero-temperature band structures. The calculated temperatu
re variation of gaps agrees with experiments to better than 10% in all
materials except InAs and InSb where the deviation is about 50%. Whil
e the simple picture that the intra (inter)-band transitions reduce (i
ncrease) the gap still holds, we show that both the conduction band ed
ge E(c) and valence band edge E(v) move down in energy. These shifts i
n E(c) affect the valence band offsets in heterojunctions at finite te
mperature. The temperature variations of valence band offset and the e
lectron effective mass are also reported.