THE ROLE OF SURFACE ADSORBATES IN THE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF (HG,CD)TE ONTO (100) GAAS SUBSTRATES

Authors
GIESS J HAILS JE GRAHAM A BLACKMORE G HOULTON MR NEWEY J YOUNG ML ASTLES MG BELL W COLEHAMILTON DJ
Citation
J. Giess et al., THE ROLE OF SURFACE ADSORBATES IN THE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF (HG,CD)TE ONTO (100) GAAS SUBSTRATES, Journal of electronic materials, 24(9), 1995, pp. 1149-1153
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
9
Year of publication
1995
Pages
1149 - 1153
Database
ISI
SICI code
0361-5235(1995)24:9<1149:TROSAI>2.0.ZU;2-R
Abstract
It has been established that a compound present as an impurity in the propan-2-ol used in the preparation of GaAs (100) substrates for the m etalorganic vapor phase epitaxy growth of (Hg,Cd)Te has a marked effec t on the crystalline perfection and surface morphology of the resultin g layers. In particular, the presence of this species, which contains Na, ensures that (i) the epitaxial overgrowth is of(100) orientation w ithout the need for ZnTe nucleation layers, and (ii) the density of py ramidal hillocks on the surface can be reproducibly < 10 cm(-2).