ELECTRICAL AND STRUCTURAL-PROPERTIES OF EPITAXIAL CDTE HGCDTE INTERFACES/

In this study, CdTe epilayers were growth by metalorganic chemical vap or deposition on epitaxial HgCdTe with the purpose of developing suita ble passivation for HgCdTe photodiodes. Two types of CdTe layers were investigated. One was grown directly, in situ, Immediately following t he growth of HgCdTe. The second type of CdTe was grown indirectly, on top of previously grown epitaxial HgCdTe samples. In this case, the su rface of the HgCdTe was exposed to ambient atmosphere, and a surface c leaning procedure was applied. The material and structural properties of the CdTe/HgCdTe interfaces were investigated using secondary ion ma ss spectroscopy, Auger electron spectroscopy, Rutherford back scatteri ng, and x-ray double crystal diffractometry techniques. Electrical pro perties of the CdTe/HgCdTe heterostructure were determined by capacita nce-voltage (C-V) characterization of Schottky barrier devices and met al insulator semiconductor devices. Also, a preliminary current-voltag e characterization of n(+)p photodiodes was performed. A theoretical m odel suitable for analysis of graded heterojunction devices was used f or interpretation of C-V measurements.