CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN HGCDTE EPILAYERSBY MIDINFRARED INTERBAND MAGNETOABSORPTION

Interband magneto-absorption is used to characterize molecular beam ep itaxially (MBE) grown HgCdTe epilayers. Both the bandgap and the Moss- Burstein shift in n-doped layers are determined from the experiments. A heterostructure sample consisting of four layers with different comp ositions is also analyzed. Due to the good experimental sensitivity al l four bandgaps are determined, in contrast to optical transmission an alysis without a magnetic field where only the lowest gap is readily v isible. the interband magneto-absorption signal strongly depends on th e electron mobility. This has been used as an aid to optimizing the MB E growth conditions of HgCdTe layers on different substrate orientatio ns.