1 F NOISE AND MATERIAL DEFECTS IN HGCDTE DIODES/

Authors
SCHIEBEL R BARTHOLOMEW D BEVAN M LIST RS OHLSON M
Citation
R. Schiebel et al., 1 F NOISE AND MATERIAL DEFECTS IN HGCDTE DIODES/, Journal of electronic materials, 24(9), 1995, pp. 1299-1303
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
9
Year of publication
1995
Pages
1299 - 1303
Database
ISI
SICI code
0361-5235(1995)24:9<1299:1FNAMD>2.0.ZU;2-M
Abstract
1/f noise is measured on long wavelength diodes as a function of devic e geometry, band gap, temperature, diode bias, and anneal temperature for a Te-rich CdTe passivation layer. The results show that for these diodes the 1/f noise is a bulk phenomena due to the modulation of gene ration recombination current associated with defects formed by the int erdiffusion of Te-rich CdTe, and that these defects are located in the junction region. No 1/f noise is observed for the lowest interdiffusi on anneal temperature.