CHARACTERIZATION OF LIQUID-PHASE EPITAXIALLY GROWN HGCDTE FILMS BY MAGNETORESISTANCE MEASUREMENTS

In this paper, we demonstrate that measurements of the magnetoresistan ce can be used as a valuable alternative to conventional characterizat ion tools to study transport properties of advanced semiconducting mat erials, structures, or devices. We have measured magnetoresistance on two different systems, namely, three liquid-phase epitaxially grown Hg CdTe films and two GaAs-based high-electron-mobility-transistor (HEMT) structures. The results are analyzed by using a two-carrier model as a reference in the context of the reduced-conductivity-tensor scheme. The HEMT data are in quantitative agreement with the two carrier model , but the HgCdTe data exhibit appreciable deviations from the model. T he observed deviations strongly indicate a mobility spread and materia l complexity in the HgCdTe samples which are probably associated with inhomogeneities and the resulting anomalous electrical behavior.