N. Mutoh et al., A 1 4-INCH 380 K PIXEL IT-CCD IMAGE SENSOR EMPLOYING GATE-ASSISTED PUNCHTHROUGH READ-OUT MODE/, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1783-1788
A newly developed 1/4-inch 380 k pixel IT-CCD image sensor features a
novel cell structure in which signal charges are read out from a photo
diode (PD) to a vertical-CCD (V-CCD) in a gate-assisted punchthrough m
ode. The cell structure, fabricated through the use of high energy ion
implantation technology, enables both deep PD formation and transfer-
gate (TG)/channel-stop (CS) length reduction, Deep PD formation helps
increase sensitivity per PD unit area, and TG/CS length reduction wide
ns both PD and V-CCD areas. Although the cell size is small (4.8 mu m
(H) x 5.6 mu m (V)), the sensor achieves both high sensitivity (35 mV/
Ix) and a high saturation signal (600 mV).