REDISTRIBUTION OF ION-IMPLANTED PHOSPHORUS IN SILICON DURING NANOSECOND LASER ANNEALING

Authors
MALYSHEV SA MARKEVICH MI MATUSEVICH LV PISKUNOV FA CHEN C
Citation
Sa. Malyshev et al., REDISTRIBUTION OF ION-IMPLANTED PHOSPHORUS IN SILICON DURING NANOSECOND LASER ANNEALING, Inorganic materials, 31(9), 1995, pp. 1056-1058
Citations number
9
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
31
Issue
9
Year of publication
1995
Pages
1056 - 1058
Database
ISI
SICI code
0020-1685(1995)31:9<1056:ROIPIS>2.0.ZU;2-R