ELECTROACTIVE AND ELECTROINACTIVE DOPANTS IN BI2TE3 AND THEIR INTERACTION WITH ANTISITE DEFECTS

Citation
Sn. Chizhevskaya et Le. Shelimova, ELECTROACTIVE AND ELECTROINACTIVE DOPANTS IN BI2TE3 AND THEIR INTERACTION WITH ANTISITE DEFECTS, Inorganic materials, 31(9), 1995, pp. 1083-1095
Citations number
139
Categorie Soggetti
Material Science
Journal title
ISSN journal
00201685
Volume
31
Issue
9
Year of publication
1995
Pages
1083 - 1095
Database
ISI
SICI code
0020-1685(1995)31:9<1083:EAEDIB>2.0.ZU;2-J
Abstract
In this review article, we summarize the available data on the doping of Bi2Te3 with electroactive and electroinactive impurities, which is usually aimed at producing an n-type Bi2Te3 material for thermoelectri c converters (solid-state coolers and generators) [1].