ELECTRON-CONCENTRATION DEPENDENCE OF ABSORPTION AND REFRACTION IN N-IN0.53GA0.47AS NEAR THE BAND-EDGE

Authors
HAHN D JASCHINSKI O WEHMANN HH SCHLACHETZKI A ORTENBERG MV
Citation
D. Hahn et al., ELECTRON-CONCENTRATION DEPENDENCE OF ABSORPTION AND REFRACTION IN N-IN0.53GA0.47AS NEAR THE BAND-EDGE, Journal of electronic materials, 24(10), 1995, pp. 1357-1361
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
10
Year of publication
1995
Pages
1357 - 1361
Database
ISI
SICI code
0361-5235(1995)24:10<1357:EDOAAR>2.0.ZU;2-L
Abstract
The optical constants of InGaAs were determined as a function of elect ron concentration in the range from 10(15) to 2 x 10(19) cm(3) by refl ectance- and transmission-spectroscopy. A pronounced shift of the fund amental absorption edge toward shorter wavelengths with increasing dop ing concentration was found. The experimental results can be satisfact orily explained by band-filling and band-gap shrinkage.