CONDUCTION-BAND OFFSET OF STRAINED INGAP BY QUANTUM-WELL CAPACITANCE-VOLTAGE PROFILING

The conduction band alignment of compressively strained In1-xGaxP rela tive to lattice matched InGaP/GaAs has been determined by capacitance- voltage profiling. A. modified version of Kroemer's capacitance-voltag e profiling method is developed wherein a quantum well is profiled ins tead of a single heterojunction. A one dimensional Poisson-Schrodinger solver was used to fit the reconstructed carrier profiles correspondi ng to a value of Delta E(c) at varying temperatures. Schottky barrier diode structures containing a singe strained InGaP quantum well were g rown by low pressure metalorganic chemical vapor deposition. The two s trained compositions studied contained 35 and 31% gallium. Conduction band offsets of 101 and 131 meV were found for the 35 and 31% samples, respectively, with an estimated accuracy of +/-5 meV. These results a greed closely with values predicted by empirical calculations.