HIGH-PERFORMANCE ALAS GAXIN1-XAS RESONANT-TUNNELING DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
YEN JC KELLER BP DENBAARS SP MISHRA UK
Citation
Jc. Yen et al., HIGH-PERFORMANCE ALAS GAXIN1-XAS RESONANT-TUNNELING DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of electronic materials, 24(10), 1995, pp. 1387-1390
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
10
Year of publication
1995
Pages
1387 - 1390
Database
ISI
SICI code
0361-5235(1995)24:10<1387:HAGRDB>2.0.ZU;2-K
Abstract
We report on AlAs/GaxIn1-xAs (x = 0.47) quantum well heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on InP substra tes. Heterostructure quality was evaluated by high resolution x-ray di ffraction for various growth conditions. Double barrier quantum well h eterostructures were grown and processed into resonant tunneling diode s (RTDs). Room temperature electric:al measurements of the RTDs yielde d maximum peak to valley current ratios of 7.7 with peak current densi ty of 96 kA/cm(2) and 11.3 with peak current density of 12 kA/cm(2), f or devices grown by atmospheric and low pressure MOCVD, respectively.